Hello,
I just got a memory kit Corsair CMK16GX4M2B3200C16 why if this is a DDR4-3200 the memory speed shows as:
Memory Speed: 1066.1 MHz (DDR4-2132 / PC4-17000)?
Thanks.
I just got a memory kit Corsair CMK16GX4M2B3200C16 why if this is a DDR4-3200 the memory speed shows as:
Memory Speed: 1066.1 MHz (DDR4-2132 / PC4-17000)?
Memory |
[General information] | ||
Total Memory Size: | 16 GBytes | |
Total Memory Size [MB]: | 16384 | |
[Current Performance Settings] | ||
Maximum Supported Memory Clock: | Unlimited | |
Current Memory Clock: | 1066.7 MHz | |
Current Timing (tCAS-tRCD-tRP-tRAS): | 15-15-15-36 | |
Memory Channels Supported: | 2 | |
Memory Channels Active: | 2 | |
Command Rate: | 1T | |
Read to Read Delay (tRD_RD) Same Rank: | 3T | |
Read to Read Delay (tRD_RD) Different DIMM: | 3T | |
Write to Write Delay (tWR_WR) Same Rank: | 3T | |
Write to Write Delay (tWR_WR) Different DIMM: | 5T | |
Read to Precharge Delay (tRTP): | 8T | |
Write to Precharge Delay (tWTP): | 27T | |
Write Recovery Time (tWR): | 16T | |
Row Cycle Time (tRC): | 51T | |
Refresh Cycle Time (tRFC): | 374T | |
Four Activate Window (tFAW): | 23T |
Row: 2 - 8 GB PC4-17000 DDR4 SDRAM Corsair CMK16GX4M2B3200C16 |
[General Module Information] | ||
Module Number: | 2 | |
Module Size: | 8 GBytes | |
Memory Type: | DDR4 SDRAM | |
Module Type: | Unbuffered DIMM (UDIMM) | |
Memory Speed: | 1066.1 MHz (DDR4-2132 / PC4-17000) | |
Module Manufacturer: | Corsair | |
Module Part Number: | CMK16GX4M2B3200C16 | |
Module Revision: | 0.0 | |
Module Serial Number: | 0 | |
Module Manufacturing Date: | N/A | |
Module Manufacturing Location: | 0 | |
SDRAM Manufacturer: | Samsung | |
DRAM Steppping: | 0.0 | |
Error Check/Correction: | None | |
[Module Characteristics] | ||
Row Address Bits: | 16 | |
Column Address Bits: | 10 | |
Module Density: | 8192 Mb | |
Number Of Ranks: | 1 | |
Device Width: | 8 bits | |
Bus Width: | 64 bits | |
Die Count: | 1 | |
Module Nominal Voltage (VDD): | 1.2 V | |
Minimum SDRAM Cycle Time (tCKAVGmin): | 0.93800 ns | |
Maximum SDRAM Cycle Time (tCKAVGmax): | 1.50000 ns | |
CAS# Latencies Supported: | 9, 10, 11, 12, 13, 14, 15, 16 | |
Minimum CAS# Latency Time (tAAmin): | 13.500 ns | |
Minimum RAS# to CAS# Delay (tRCDmin): | 13.500 ns | |
Minimum Row Precharge Time (tRPmin): | 14.061 ns | |
Minimum Active to Precharge Time (tRASmin): | 33.000 ns | |
Supported Module Timing at 1066.7 MHz: | 15-15-15-36 | |
Supported Module Timing at 933.3 MHz: | 13-13-14-31 | |
Supported Module Timing at 800.0 MHz: | 11-11-12-27 | |
Supported Module Timing at 666.7 MHz: | 9-9-10-22 | |
Minimum Active to Active/Refresh Time (tRCmin): | 46.500 ns | |
Minimum Refresh Recovery Time Delay (tRFC1min): | 350.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC2min): | 260.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC4min): | 160.000 ns | |
Minimum Four Activate Window Delay Time (tFAWmin): | 21.000 ns | |
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): | 3.701 ns | |
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): | 5.300 ns | |
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): | 5.356 ns | |
[Features] | ||
Module Temperature Sensor (TSOD): | Not Supported | |
Module Nominal Height: | 31 - 32 mm | |
Module Maximum Thickness (Front): | 1 - 2 mm | |
Module Maximum Thickness (Back): | 1 - 2 mm | |
Address Mapping from Edge Connector to DRAM: | Standard | |
[Intel Extreme Memory Profile (XMP)] | ||
XMP Revision: | 2.0 | |
[Certified Profile [Enabled]] | ||
Module VDD Voltage Level: | 1.35 V | |
Minimum SDRAM Cycle Time (tCKAVGmin): | 0.62500 ns | |
CAS# Latencies Supported: | 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 25 | |
Minimum CAS# Latency Time (tAAmin): | 9.990 ns | |
Minimum RAS# to CAS# Delay (tRCDmin): | 11.240 ns | |
Minimum Row Precharge Time (tRPmin): | 11.240 ns | |
Minimum Active to Precharge Time (tRASmin): | 22.375 ns | |
Supported Module Timing at 1600.0 MHz: | 16-18-18-36 | |
Supported Module Timing at 1466.7 MHz: | 15-17-17-33 | |
Supported Module Timing at 1333.3 MHz: | 14-15-15-30 | |
Supported Module Timing at 1200.0 MHz: | 12-14-14-27 | |
Supported Module Timing at 1066.7 MHz: | 11-12-12-24 | |
Supported Module Timing at 933.3 MHz: | 10-11-11-21 | |
Minimum Active to Active/Refresh Time (tRCmin): | 33.750 ns | |
Minimum Refresh Recovery Time Delay (tRFC1min): | 349.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC2min): | 259.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC4min): | 159.000 ns | |
Minimum Four Activate Window Delay Time (tFAWmin): | 22.000 ns | |
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): | 3.740 ns | |
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): | 5.620 ns |
Row: 3 - 8 GB PC4-17000 DDR4 SDRAM Corsair CMK16GX4M2B3200C16 |
[General Module Information] | ||
Module Number: | 3 | |
Module Size: | 8 GBytes | |
Memory Type: | DDR4 SDRAM | |
Module Type: | Unbuffered DIMM (UDIMM) | |
Memory Speed: | 1066.1 MHz (DDR4-2132 / PC4-17000) | |
Module Manufacturer: | Corsair | |
Module Part Number: | CMK16GX4M2B3200C16 | |
Module Revision: | 0.0 | |
Module Serial Number: | 0 | |
Module Manufacturing Date: | N/A | |
Module Manufacturing Location: | 0 | |
SDRAM Manufacturer: | Samsung | |
DRAM Steppping: | 0.0 | |
Error Check/Correction: | None | |
[Module Characteristics] | ||
Row Address Bits: | 16 | |
Column Address Bits: | 10 | |
Module Density: | 8192 Mb | |
Number Of Ranks: | 1 | |
Device Width: | 8 bits | |
Bus Width: | 64 bits | |
Die Count: | 1 | |
Module Nominal Voltage (VDD): | 1.2 V | |
Minimum SDRAM Cycle Time (tCKAVGmin): | 0.93800 ns | |
Maximum SDRAM Cycle Time (tCKAVGmax): | 1.50000 ns | |
CAS# Latencies Supported: | 9, 10, 11, 12, 13, 14, 15, 16 | |
Minimum CAS# Latency Time (tAAmin): | 13.500 ns | |
Minimum RAS# to CAS# Delay (tRCDmin): | 13.500 ns | |
Minimum Row Precharge Time (tRPmin): | 14.061 ns | |
Minimum Active to Precharge Time (tRASmin): | 33.000 ns | |
Supported Module Timing at 1066.7 MHz: | 15-15-15-36 | |
Supported Module Timing at 933.3 MHz: | 13-13-14-31 | |
Supported Module Timing at 800.0 MHz: | 11-11-12-27 | |
Supported Module Timing at 666.7 MHz: | 9-9-10-22 | |
Minimum Active to Active/Refresh Time (tRCmin): | 46.500 ns | |
Minimum Refresh Recovery Time Delay (tRFC1min): | 350.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC2min): | 260.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC4min): | 160.000 ns | |
Minimum Four Activate Window Delay Time (tFAWmin): | 21.000 ns | |
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): | 3.701 ns | |
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): | 5.300 ns | |
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): | 5.356 ns | |
[Features] | ||
Module Temperature Sensor (TSOD): | Not Supported | |
Module Nominal Height: | 31 - 32 mm | |
Module Maximum Thickness (Front): | 1 - 2 mm | |
Module Maximum Thickness (Back): | 1 - 2 mm | |
Address Mapping from Edge Connector to DRAM: | Standard | |
[Intel Extreme Memory Profile (XMP)] | ||
XMP Revision: | 2.0 | |
[Certified Profile [Enabled]] | ||
Module VDD Voltage Level: | 1.35 V | |
Minimum SDRAM Cycle Time (tCKAVGmin): | 0.62500 ns | |
CAS# Latencies Supported: | 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 25 | |
Minimum CAS# Latency Time (tAAmin): | 9.990 ns | |
Minimum RAS# to CAS# Delay (tRCDmin): | 11.240 ns | |
Minimum Row Precharge Time (tRPmin): | 11.240 ns | |
Minimum Active to Precharge Time (tRASmin): | 22.375 ns | |
Supported Module Timing at 1600.0 MHz: | 16-18-18-36 | |
Supported Module Timing at 1466.7 MHz: | 15-17-17-33 | |
Supported Module Timing at 1333.3 MHz: | 14-15-15-30 | |
Supported Module Timing at 1200.0 MHz: | 12-14-14-27 | |
Supported Module Timing at 1066.7 MHz: | 11-12-12-24 | |
Supported Module Timing at 933.3 MHz: | 10-11-11-21 | |
Minimum Active to Active/Refresh Time (tRCmin): | 33.750 ns | |
Minimum Refresh Recovery Time Delay (tRFC1min): | 349.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC2min): | 259.000 ns | |
Minimum Refresh Recovery Time Delay (tRFC4min): | 159.000 ns | |
Minimum Four Activate Window Delay Time (tFAWmin): | 22.000 ns | |
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): | 3.740 ns | |
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): | 5.620 ns |