Researchers at Oak Ridge National Laboratory made a GaN transistor that lasted three days at 125 degrees Celsius inside a nuclear core.
Experimental transistor survives in a nuclear reactor at 125 degrees Celsius temps — GaN semiconductor can survive up to five years in a reactor : Read more
Experimental transistor survives in a nuclear reactor at 125 degrees Celsius temps — GaN semiconductor can survive up to five years in a reactor : Read more