Hynix sees yield rate jump on 0.11-micron DRAM, plans to produce 90nm NAND flash

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Hynix Semiconductor has increased its 0.11-micron DRAM production yield rates at its 12" M10 fab in Icheon, South Korea, according to sources in Taiwan.

Hynix sees yield rate jump on 0.11-micron DRAM, plans to produce 90nm NAND flash : Read more