[SOLVED] Low FPS, choppy and laggy gameplay ?

[qvik]

i have:

CPU: ryzen 5 3500
GPU: 1660,
RAM: 1x16 gb and 1x 8gb 3000mhz and 165hz,
Windows 10

When hpet in disable i.e bcdedit /deletevalue useplatformclock am getting around 220-240 fps with lots of choppy laggy game play,enemy has insane reaction time like they are some vct pro(i think my enemy should play vct with those insane reaction time)hit reg issue,i am dying behind walls ,spray seems complete choppy like over spray or over shoot....
And for bcdedit /set useplatformclock true every thing seems so perfect,butter smooth but the problem is when using this command am getting very low fps i.e 120-70 and it that fps i cannot play..
please help

 

[sizzling]

Miss matched RAM stands out, at least 8gb will be running in single channel mode. I would also check that the RAM is actually running at 3000mhz and not 2133/2400.

Run userbenchmark and share the public link to the results.

 

[mdd1963]

The mismatched RAM sizes (mixing a 16 GB and 8 GB module)might not be helping with maintaining actual dual channel RAM access...if any is actually possible, but, if not....Ryzen rarely thrives on inadequate RAM bandwidth.

The R5-3500 has but 6 cores/6 threads, which, as suffered by the i5-8400/9400, might not lead to the best in minimum FPS/.1% lows....(depending on the game, and of course the chosen resolution, I'm not sure the R5-3600 and/or GTX1660 are capable of maintaining 165 FPS to support 165 Hz refresh rate, and, many report 'stutter' when monitors drop below spec'd refresh rate....

 

[qvik]

CPU CPU Clock Motherboard Chipset Memory CL-RCD-RP-RAS Latency
Ryzen 5 3500 4200 MHz [ TRIAL VERSION ] B450 Dual DDR4-3000 16-20-20-38 CR1 83.2 ns


UserBenchmarks: Game 61%, Desk 87%, Work 54%
CPU: AMD Ryzen 5 3500 - 86.5%
GPU: Nvidia GTX 1660 - 66%
SSD: WD Green 240GB (2018) - 53.4%
RAM: Unknown CMK8GX4M1D3000C16 CMW16GX4M1D3000C16 24GB - 79.6%
MBD: Gigabyte GA-B450M AORUS ELITE


HWiNFO64 Version 7.22-4731

DESKTOP-C12JMQF -----------------------------------------------------------

[Current Computer]
[Operating System]

Memory --------------------------------------------------------------------

[General Information]
Total Memory Size: 24 GBytes
Total Memory Size [MB]: 24576
[Current Performance Settings]
Maximum Supported Memory Clock: Unlimited
Current Memory Clock: 1497.2 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 16-20-20-38
Memory Channels Supported: 2
Memory Channels Active: 2
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 5T
Read to Read Delay (tRDRD_SD) Same DIMM: 5T
Read to Read Delay (tRDRD_DD) Different DIMM: 4T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 5T
Write to Write Delay (tWRWR_SD) Same DIMM: 7T
Write to Write Delay (tWRWR_DD) Different DIMM: 6T
Read to Write Delay (tRDWR): 8T
Write to Read Delay (tWRRD): 3T
Read to Precharge Delay (tRTP): 12T
Write to Precharge Delay (tWTP): 35T
Write Recovery Time (tWR): 24T
Row Cycle Time (tRC): 58T
Refresh Cycle Time (tRFC): 525T
Four Activate Window (tFAW): 33T

Row: 2 [P0 CHANNEL A/DIMM 1] - 8 GB PC4-23900 DDR4 SDRAM Corsair CMK8GX4M1D3000C16

[General Module Information]
Module Number: 2
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1499.3 MHz (DDR4-2998 / PC4-23900)
Module Manufacturer: Corsair
Module Part Number: CMK8GX4M1D3000C16
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: Micron
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 533.3 MHz: 8-8-8-18
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.66700 ns (1500 MHz)
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 10.672 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.340 ns
Minimum Row Precharge Time (tRPmin): 13.340 ns
Minimum Active to Precharge Time (tRASmin): 25.250 ns
Supported Module Timing at 1500.0 MHz: 16-20-20-38
Supported Module Timing at 1466.7 MHz: 16-20-20-37
Supported Module Timing at 1333.3 MHz: 15-18-18-34
Supported Module Timing at 1200.0 MHz: 13-16-16-31
Supported Module Timing at 1066.7 MHz: 12-15-15-27
Supported Module Timing at 933.3 MHz: 10-13-13-24
Supported Module Timing at 800.0 MHz: 9-11-11-21
Supported Module Timing at 666.7 MHz: 8-9-9-17
Minimum Active to Active/Refresh Time (tRCmin): 38.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.002 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.336 ns

Row: 3 [P0 CHANNEL B/DIMM 1] - 16 GB PC4-24000 DDR4 SDRAM Corsair CMW16GX4M1D3000C16

[General Module Information]
Module Number: 3
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1501.5 MHz (DDR4-3003 / PC4-24000)
Module Manufacturer: Corsair
Module Part Number: CMW16GX4M1D3000C16
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: Micron
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 533.3 MHz: 8-8-8-18
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.66600 ns (1500 MHz)
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 10.656 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.320 ns
Minimum Row Precharge Time (tRPmin): 13.320 ns
Minimum Active to Precharge Time (tRASmin): 25.250 ns
Supported Module Timing at 1500.0 MHz: 16-20-20-38
Supported Module Timing at 1466.7 MHz: 16-20-20-37
Supported Module Timing at 1333.3 MHz: 15-18-18-34
Supported Module Timing at 1200.0 MHz: 13-16-16-31
Supported Module Timing at 1066.7 MHz: 12-15-15-27
Supported Module Timing at 933.3 MHz: 10-13-13-24
Supported Module Timing at 800.0 MHz: 9-11-11-21
Supported Module Timing at 666.7 MHz: 8-9-9-17
Minimum Active to Active/Refresh Time (tRCmin): 38.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.996 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.328 ns

 

[qvik]

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