"The Snapdragon 835 will contain 10nm FinFET transistors when it is released, but that doesn’t necessarily mean it will be a complete 10nm design" naturally not all components will on a FinFET at all. CPU's, GPU cluster & hopefully DSP blocks would be on 10 nm FinFET all RF and probably mixed signal components (cellular broadband radio, WiFi, GPS, Bluetooth...) certainly won't (on FinFET at all). I would be more interested & presently surprised if those RF components would be built using (now mature) 28nm Samsungs FD-SOI as I am certain that would much more contribute to battery life (especially cellular radio & GPS) & there for user experience. Certainly that would be a much better than retarded MHz war in something that should be power consumption optimized. We will see but I am not a big believer when it comes to this. Up to date we have seen only a Sony GPS module built on Samsung 28nm FD-SOI and only in couple of smart watches. Results are about half power consumption compared to regular 20 nm planar proces. When you took into consideration the how much Google location service diminish battery life on your current Android phone that you certainly felt you will get a pretty good picture what I am talking about. Best regards.