SanDisk today announced that it expects to soon launch 56nm multi-level cell (MLC) NAND flash memory chips with Toshiba at Toshiba's 12" fab (Fab 3) at Yokkaichi, Nagoya, Japan. By spring 2007, SanDisk intends to ship the highest available density of single-chip MLC NAND flash memory.
SanDisk and Toshiba to launch 56 nm-made NAND flash soon : Read more
SanDisk and Toshiba to launch 56 nm-made NAND flash soon : Read more
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