Thanks for taking the time with the reply. All good points towards the concerns.
High NA:
A
high-NA EUV lithography scanner is projected to print the most critical features of 2nm (and beyond) logic chips in a smaller number of patterning steps.
The transition towards high-NA lithography is again justified by the Rayleigh equation. This provides a second knob for improving the resolution: increasing the numerical aperture (NA) of the projection lens. The NA controls the amount of light (more precisely, the number of diffraction orders) that is used to form the image. Which means it also determines the quality of the image.
Transitioning to higher NA imaging equipment has been applied before. Remember the move from 193nm dry to 193nm immersion lithography. At that time, the optical trick of replacing the air between lens and wafer with water allowed a 45% increase in NA.
In essence, higher NA will enable the scanners to print more fine etched lines which will reduce the need of multiple steps in patterning and thus reduce the number of defects in the process leading to reduced manufacturing costs.
This video at 3:49 explains it well:
View: https://www.youtube.com/watch?v=en7hhFJBrAI&t=721s
In the case of EUV, ASML will move from the current
0.33 to 0.55NA (i.e., a 67% increase in NA). This will be achieved by redesigning the optics within the lithography system. 0.55NA EUV lithography promises to ultimately enable 8nm resolution. This corresponds to printing lines/spaces of 16nm pitch in one single exposure