News Chinese DRAM Maker Developing HBM-Like Memory

[Admin]

China-based ChangXin Memory Technologies wants to develop domestic HBM analogue to address AI and HPC processors.

Chinese DRAM Maker Developing HBM-Like Memory : Read more

 

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What HBM does require is sophisticated packaging technologies — as connecting eight or twelve memory devices vertically using tiny through silicon vias (TSVs) is a complicated procedure.

If everyone and their dog is jumping onto the backside power delivery train which also requires TSVs, then the "cost-complexity" of TSVs must have come down drastically since the days where TSVs were considered exotic.

Or China could rip pages from that multi-layer DRAM story from a few days ago and try to beat the world at making the first 16/32/64GB single-die DRAM chips.

 

[bit_user]

If everyone and their dog is jumping onto the backside power delivery train which also requires TSVs, then the "cost-complexity" of TSVs must have come down drastically since the days where TSVs were considered exotic.

That's one explanation. Perhaps experience with DRAM-stacking indeed helped, there.

However, another reason why backside power delivery is suddenly happening now is that power demands have been going up, while the size of the wires used to deliver it have stopped decreasing. That means they're taking up proportionately much more area than before, which makes minimizing their intrusion into the logic layers of the die a much higher-value problem.

 

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However, another reason why backside power delivery is suddenly happening now is that power demands have been going up, while the size of the wires used to deliver it have stopped decreasing. That means they're taking up proportionately much more area than before, which makes minimizing their intrusion into the logic layers of the die a much higher-value problem.

Why wires? You can do top-side delivery with vias too and top-side power vias can be as small as the finest process you can be bothered to use for them. TSVs on the other hand only go down to about 1um in diameter, which means you will still need power routing in the bottom metal layers to fan it out.

The alleged density gains from backside power delivery likely come primarily from having few if any power routing contentions when you can get GND from the back (don't want the IHS to be live at 1.3V 300A) and Vbunchofrails from the front.

 

[gg83]

I would say that the South China Morning Post is not even close to a reputable source of information. as it is owned by alibaba