Yeah, the "nm" may not be precise about what the physical nm is. But it is still quite an indication about which node-generation the talk is about. I.e. "10 nm", there wasn't anyone who had it before 2016 (nor smaller or denser than that), "7 nm process" was 2017/2018 and onwards, and so on. And in any case, the "International Technology Roadmap for Semiconductors" still goes by such naming.
Nevertheless, if one wants to talk i.e. about metal–oxide–semiconductor field-effect transistors, or e.g. about fin field-effect transistors in particular, then cool. I just don't think that the article was intended as an academical fine-print piece, the readability of which would get prolonged a lot if the author would add all the little details to the naming as is.