Intel has already presented numbers of 15% better performance per watt for their RibbonFET vs FinFET.
GAA is also said to reduce leakage current.
THW reported on BSPD : "increase clock speed by over 6%, reduced IR voltage droop by 30%, and increased cell utilization over large areas of its E-core die to over 90%"
... so, TSM won't see the BSPD advantages for a couple of years.
The IR voltage droop 30% reduction looks interesting. Any possibility Intel takes advantage of that to simply run the chips at lower voltage?
GAA is also said to reduce leakage current.
THW reported on BSPD : "increase clock speed by over 6%, reduced IR voltage droop by 30%, and increased cell utilization over large areas of its E-core die to over 90%"
... so, TSM won't see the BSPD advantages for a couple of years.
The IR voltage droop 30% reduction looks interesting. Any possibility Intel takes advantage of that to simply run the chips at lower voltage?