TSMC to use 12FFC+ and N5 process technologies to build base dies for HBM4.
TSMC to build base dies for HBM4 memory on its 12nm and 5nm nodes : Read more
TSMC to build base dies for HBM4 memory on its 12nm and 5nm nodes : Read more
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It's just the logic-containing base die, not the entire stack! As mentioned in the article, there are 12 or 16 DRAM dies stacked atop it, providing 48 GB or 64 GB of memory capacity.Making a commodity like memory on 5nm just shows how big the AI bubble is.