YMTC's X3-6070 3D QLC NAND can sustain 4,000 P/E cycles, according to the company.
YMTC: Our 3D QLC NAND matches endurance of 3D TLC NAND : Read more
YMTC: Our 3D QLC NAND matches endurance of 3D TLC NAND : Read more
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How about you show us how to run a memory company and revolutionize the ssd industry? Actually no one cares about your paltry opinion.1. We don't believe you.
2. How about we improve the endurance of TLC NAND instead?
Yes, that was my point.Also, improving the endurance of QLC will in turn benefit TLC as well.
Giving 5 TB from 4 TB as an example is a puzzling choice (even with the squiggly line) since that is 25% (the same as a density increase from QLC to PLC).QLC NAND will only ever improve capacity from TLC by 33%. So you get ~5 TB instead of 4 TB, wow big deal. Adding more layers will continue to be the primary way to improve capacity.
It's called rounding down. 3 TB is uncommon, most consumer lineups skip from 2 to 4.Giving 5 TB from 4 TB as an example is a puzzling choice (even with the squiggly line) since that is 25% (the same as a density increase from QLC to PLC).
Comparing 4 TB to 3 TB is the accurate portrayal of a 33% increase. Both of those capacities exist as real products. Where has anyone even seen a 5 TB SSD?
Wait what? There are zero 5 TB SSDs. That is about as uncommon as it can get. Among the numerical values you could have used, you chose one which had to be rounded (and with only one significant digit) rather than two clean integers. Seems a bit deceitful.It's called rounding down. 3 TB is uncommon, most consumer lineups skip from 2 to 4.
Okay. I’ll bite.Any more China shills want to weigh in? Get your shots in.
Thanks for this detail. I'd point out that hard drives traditionally offer a retention period of 5 years or longer.a data retention period of one year at 30 degrees Celsius, which is on par with TLC solid-state drives.
They probably have a pseudo-TLC mode, I'd guess. I think NAND makers tend to support lower-density operation both for more critical applications and for dynamically-sized write buffers.2. How about we improve the endurance of TLC NAND instead?
QLC only adds 33% more capacity over TLC. So, it's hardly revolutionary.Improving the endurance of TLC NAND doesn’t move us towards higher capacity.
There are plenty of QLC NVMe drives. As I mentioned above, going from TLC -> QLC equates to going from a 2 TB drive to 2.66 TB. If you went all the way to PLC, you'd get another 25% more capacity, but with even greater compromises.You really wanna stick with 2TB mainstream NVMe drives for another 4 years?
So, you're acknowledging TLC endurance is a relevant concern? How is it then also irrational?Also, improving the endurance of QLC will in turn benefit TLC as well. So keep those irrational comments to yourself.
I think a big part of that discrepancy is that you're looking at user writes. Due to write-amplification, the amount of device writes is much higher. Also, the device is continually internally generating internal writes as it patrols for bit decay and rewrites data when it finds blocks with recoverable errors.These numbers appear to be 6-10x what consumer drives warranty for on QLC, and 4x what the best enterprise QLC has achieved. I believe the P41 Solidigm drive has the best endurance at 400 cycles (e.g.1tb drive warranty is 400TBW).
No, they specify endurance in terms of host writes, since a user doesn't have much control over the other stuff.there is definitely some write amplification occurring alongside wear leveling, so either Solidigm is including spare capacity to account for that,
No thanks. Big regressions for such a small capacity improvement.still hopeful for a PLC release someday.
As the NAND makers don't publicly announce their NAND P/E cycle capability, I have always estimated it on what the drives can achieve(warranty for). And for that, these stated 4k QLC P/E numbers are unreasonable/ unrealistic based on what is on the market today ( top QLC drive on the warranty side only boast ≈1060 total write cycles)I think a big part of that discrepancy is that you're looking at user writes. Due to write-amplification, the amount of device writes is much higher. Also, the device is continually internally generating internal writes as it patrols for bit decay and rewrites data when it finds blocks with recoverable errors.
No, they specify endurance in terms of host writes, since a user doesn't have much control over the other stuff.
Same was said about TLC when we moved from MLC... And look how the P/E chart hasn't held at all, albeit the switch to 3D stacked cells really changed the game for NAND(so not exactly fair). Controller improvements deserve a lot of the credit as well. I love the technological progression! And perhaps as we move to PLC other innovations will follow.No thanks. Big regressions for such a small capacity improvement.
I'm sure it'll happen, though. Too many unscrupulous device makers out there, trying to save a buck by any means necessary.
You realize the more ECC bits they need, the less the gains you get from packing more bits per cell, right?And on the topic of PLC
Same was said about TLC when we moved from MLC... And look how the P/E chart hasn't held at all, albeit the switch to 3D stacked cells really changed the game for NAND(so not exactly fair). Controller improvements deserve a lot of the credit as well. I love the technological progression! And perhaps as we move to PLC other innovations will follow.
If you think I'm concerned about write endurance, you're wrong. I'm always thinking about what happens when a machine stays switched off for a couple months, or a thumb drive goes that amount of time without being plugged in. There's only so far they can push density before NAND flash almost needs to be treated like volatile memory.My ancient 1tb 660p drive that is only good for 200TBW is still at 80% drive health. Most consumer use is write once read many. PLC should fit the bill fine for the majority of uses.