Besides your drive, memory is running 2133mhz not 3600 which cripples Ryzen performance.
Is this one or 2 kits of ram? looking at part numbers it appears to be 2 kits that may not play well together.
I double-checked in the bios if I had XMP on and it was disabled I enabled it and got this.
"Sorry if it is too long, I am not sure what I should provide and not provide":
[General Information]
Total Memory Size: 64 GBytes
Total Memory Size [MB]: 65536
[Current Performance Settings]
Maximum Supported Memory Clock: Unlimited
Current Memory Clock: 1800.0 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 18-22-22-42
Memory Channels Supported: 2
Memory Channels Active: 2
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 5T
Read to Read Delay (tRDRD_SD) Same DIMM: 6T
Read to Read Delay (tRDRD_DD) Different DIMM: 7T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 5T
Write to Write Delay (tWRWR_SD) Same DIMM: 9T
Write to Write Delay (tWRWR_DD) Different DIMM: 9T
Read to Write Delay (tRDWR_SC) Same Chipselect: 12T
Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 12T
Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 12T
Read to Write Delay (tRDWR_SD) Same DIMM: 12T
Read to Write Delay (tRDWR_DD) Different DIMM: 12T
Write to Read Delay (tWRRD_SC) Same Chipselect: 4T
Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 4T
Write to Read Delay (tWRRD_SD) Same DIMM: 4T
Write to Read Delay (tWRRD_DD) Different DIMM: 4T
Read to Precharge Delay (tRTP): 14T
Write to Precharge Delay (tWTP): 37T
Write Recovery Time (tWR): 26T
RAS# to RAS# Delay (tRRD_L): 10T
RAS# to RAS# Delay (tRRD_S): 7T
Row Cycle Time (tRC): 85T
Refresh Cycle Time (tRFC): 631T
Four Activate Window (tFAW): 38T
Row: 0 [P0 CHANNEL A/DIMM 0] - 16 GB PC4-28800 DDR4 SDRAM G.Skill F4-3600C16-16GTZNC
[General Module Information]
Module Number: 0
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1801.8 MHz (DDR4-3603 / PC4-28800)
Module Manufacturer: G.Skill
Module Part Number: F4-3600C16-16GTZNC
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55500 ns (1800 MHz)
CAS# Latencies Supported: 16
Minimum CAS# Latency Time (tAAmin): 8.869 ns
Minimum RAS# to CAS# Delay (tRCDmin): 10.454 ns
Minimum Row Precharge Time (tRPmin): 10.454 ns
Minimum Active to Precharge Time (tRASmin): 21.625 ns
Supported Module Timing at 1800.0 MHz: 16-19-19-39
Supported Module Timing at 1733.3 MHz: 16-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 32.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 2.029 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 1 - 16 GB PC4-28800 DDR4 SDRAM G.Skill F4-3600C16-16GTZNC ------------
[General Module Information]
Module Number: 1
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1801.8 MHz (DDR4-3603 / PC4-28800)
Module Manufacturer: G.Skill
Module Part Number: F4-3600C16-16GTZNC
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55500 ns (1800 MHz)
CAS# Latencies Supported: 16
Minimum CAS# Latency Time (tAAmin): 8.869 ns
Minimum RAS# to CAS# Delay (tRCDmin): 10.454 ns
Minimum Row Precharge Time (tRPmin): 10.454 ns
Minimum Active to Precharge Time (tRASmin): 21.625 ns
Supported Module Timing at 1800.0 MHz: 16-19-19-39
Supported Module Timing at 1733.3 MHz: 16-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 32.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 2.029 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 2 - 16 GB PC4-28700 DDR4 SDRAM Corsair CMW32GX4M2D3600C18 ------------
[General Module Information]
Module Number: 2
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1798.6 MHz (DDR4-3597 / PC4-28700)
Module Manufacturer: Corsair
Module Part Number: CMW32GX4M2D3600C18
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 533.3 MHz: 8-8-8-18
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55600 ns (1800 MHz)
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 9.998 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.222 ns
Minimum Row Precharge Time (tRPmin): 12.222 ns
Minimum Active to Precharge Time (tRASmin): 23.250 ns
Supported Module Timing at 1800.0 MHz: 18-22-22-42
Supported Module Timing at 1733.3 MHz: 18-22-22-41
Supported Module Timing at 1666.7 MHz: 17-21-21-39
Supported Module Timing at 1600.0 MHz: 16-20-20-38
Supported Module Timing at 1466.7 MHz: 15-18-18-35
Supported Module Timing at 1333.3 MHz: 14-17-17-31
Supported Module Timing at 1200.0 MHz: 12-15-15-28
Supported Module Timing at 1066.7 MHz: 11-14-14-25
Supported Module Timing at 933.3 MHz: 10-12-12-22
Supported Module Timing at 800.0 MHz: 8-10-10-19
Supported Module Timing at 666.7 MHz: 7-9-9-16
Minimum Active to Active/Refresh Time (tRCmin): 35.625 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.892 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.560 ns
Row: 3 [P0 CHANNEL B/DIMM 1] - 16 GB PC4-28700 DDR4 SDRAM Corsair CMW32GX4M2D3600C18
[General Module Information]
Module Number: 3
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1798.6 MHz (DDR4-3597 / PC4-28700)
Module Manufacturer: Corsair
Module Part Number: CMW32GX4M2D3600C18
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 533.3 MHz: 8-8-8-18
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55600 ns (1800 MHz)
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 9.998 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.222 ns
Minimum Row Precharge Time (tRPmin): 12.222 ns
Minimum Active to Precharge Time (tRASmin): 23.250 ns
Supported Module Timing at 1800.0 MHz: 18-22-22-42
Supported Module Timing at 1733.3 MHz: 18-22-22-41
Supported Module Timing at 1666.7 MHz: 17-21-21-39
Supported Module Timing at 1600.0 MHz: 16-20-20-38
Supported Module Timing at 1466.7 MHz: 15-18-18-35
Supported Module Timing at 1333.3 MHz: 14-17-17-31
Supported Module Timing at 1200.0 MHz: 12-15-15-28
Supported Module Timing at 1066.7 MHz: 11-14-14-25
Supported Module Timing at 933.3 MHz: 10-12-12-22
Supported Module Timing at 800.0 MHz: 8-10-10-19
Supported Module Timing at 666.7 MHz: 7-9-9-16
Minimum Active to Active/Refresh Time (tRCmin): 35.625 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.892 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.560 ns